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    Film thickness measurement solutions in SiC semiconductors

    2025-09-02 15:23:22 admin


    In SiC semiconductors

    Film thickness measurement solution


    Unikang Technology Co., LTD




    Directory

    01

    Overview of SiC Semiconductor Materials

    02

    The advantages of SiC material

    03

    Types of SiC devices

    04

    Application of SiC Semiconductor

    05

    SiC semiconductor manufacturer

    06

    Measurement requirements for SiC semiconductors

    01

    Overview of SiC Semiconductor Materials

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    With the maturation of the first and second generation semiconductor materials, the Si power devices currently in large-scale use have reached their performance bottlenecks. The improvement of the operating frequency, power, heat resistance temperature, energy efficiency, resistance to harsh environments and miniaturization of Si power devices is facing insurmountable bottlenecks.

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    In modern technology, more and more fields require third-generation semiconductors with high frequency, high power, high temperature resistance and good chemical stability. As an outstanding representative of third-generation semiconductors, SiC (Silcon carbide) is attracting more and more attention.

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    As a new type of semiconductor material, SiC has become an important semiconductor material for manufacturing short-wavelength optoelectronic devices, high-temperature devices, radiation-resistant devices and high-power/high-value electronic devices due to its excellent physical, chemical and electrical properties. Especially when applied under harsh and severe conditions, the characteristics of SiC devices far exceed those of Si devices and GaAs devices. Therefore, SiC devices and various sensors have gradually become one of the key components and are playing an increasingly important role.

    Since the 1980s, especially since the first SiC substrate wafer entered the market in 1989, SiC devices and circuits have developed rapidly. In some fields, such as light-emitting diodes, high-frequency high-power and high-voltage devices, SiC devices have been widely applied commercially.



    02

    The advantages of SiC material

    Sic silicon carbide materials generally have the following advantages:

    1.

    High impact field strength

    2.

    High thermal conductivity

    3.

    It has strong high-temperature oxidation resistance

    4.

    Good wear resistance

    5.

    Stable chemical properties

    6.

    High saturation and electron drift rate

    Comparison of relevant parameters of SiC with Si and GaAs

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    03

    Types of SiC devices

    Silicon carbide devices mainly include power diodes and power switch tubes.

    Power diode

    Junction barrier Schottky (JBS) diode

    PiN diodes and superjunction diodes

    Power switch tube

    Metal-oxide-semiconductor field-effect switching Transistor (MOSFET

    Junction field-effect switching Transistor (JFET

    Bipolar Junction Switching Tube (BJT

    Insulated Gate Bipolar Transistor (IGBT

    Gate turn-off thyristor (GTO

    Emitter turn-off thyristor (ETO

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    04

    Application of SiC Semiconductor

    Silicon carbide semiconductor devices, with their high-frequency, high-efficiency and high-temperature characteristics, are particularly suitable for applications with strict requirements for efficiency or temperature. It can be widely applied in fields such as solar inverters, on-board power supplies, motor controllers for new energy vehicles, UPS, charging piles, and power supplies.

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    05

    SiC semiconductor manufacturer

    Foreign manufacturers

    Domestic manufacturers

    Infineon of Germany

    Zhuzhou CRRC Times Semiconductor

    Cree Company of the United States

    Qidi New Materials (Wuhu

    GE

    Wuxi China Resources Shanghua Technology

    Rohm Corporation of Japan

    ...


    06

    Measurement requirements for SiC semiconductors

    Common types of film thickness tests in SiC semiconductor process measurement:

    -SI (1000-20000A)

    SiNx (100-4000A)

    SiO2 (30-10000A)

    USG(1000-20000A)

    C film (100-2000A

    BPSG (1000-20000A)

    POLY (1000A-20000A)


    Match the product model

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    F50-UV

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    F54-UV

    Measurement parameters

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    Measurement data

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    C on SiC

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    POLY on SiC

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    SiO2 on SiC

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    SiNx on SiC

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    USG on SiC

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    BPSG on SiC


    The author of this article

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    Hu Shudong

    Sales Manager of East China Region

    With over a decade of experience in the film measurement industry, I have extensive expertise in providing solutions for film measurement. It has solved the originally rather thorny problems in the microfluidic chip industry, such as the need to measure the morphology and depth of flow channels.

    There will be a time when the strong wind breaks through the waves and the sail is hoisted high to cross the vast sea

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    We have been deeply involved in the film measurement industry for over a decade. No matter what problems you have in film measurement, our technical experts can provide you with valuable advice or solutions. Welcome to call us. We are very glad to discuss your application issues with you.


    Consultation hotline: 400-186-8882

    E-mail: info@unicorn-tech.com

    Unikang Technology Co., LTD

    Yiying Technology (Shanghai) Co., LTD


    Schedule a Free Sample Analysis Today

    Contact us to get your customized sample measurement solution.

    PRECISION THIN FILM MEASUREMENT EXPERT

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